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          NXP Semiconductors 1PS79SB30 Schottky barrier single diode 1PS79SB30 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 24 July 2012 2 / 8 3. Ordering information Table 3. Ordering information Package Type number Name Description Version 1PS79SB30 SOD523 plastic surface-mounted package; 2 leads SOD523 4. Marking Table 4. Marking codes Type number Marking code 1PS79SB30 G1 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 40 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current tp = 8.3 ms; T j(init) = 25 °C; half sine wave - 1 A Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 450 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. |